1 edition 1.5 august 2004 FLM1415-6F internally matched power gaas fet item drain-source voltage gate-source voltage total power dissipation storage temperature channel temperature symbol v ds v gs 15 -5 31.2 -65 to +175 175 t c = 25 c v v w c c p t t stg t ch condition unit rating absolute maximum rating (ambient temperature ta=25 c) fujitsu recommends the following conditions for the reliable operation of gaas fets: 1. the drain-source operating voltage (v ds ) should not exceed 10 volts. 2. the forward and reverse gate currents should not exceed 26.0 and -2.8 ma respectively with gate resistance of 100 ? . item saturated drain current transconductance pinch-off voltage gate source breakdown voltage output power at 1db g.c.p. power gain at 1db g.c.p. symbol i dss - 2800 4200 -0.5 -1.5 -3.0 36.0 37.0 - 4.5 5.5 - v ds = 5v, i ds = 120ma v ds = 5v, i ds = 1800ma v ds = 5v, v gs = 0v i gs = -120 a v ds = 10v, i ds = 0.6 i dss (typ.), f = 14.5 ~ 15.3 ghz, z s = z l = 50 ? ma v - 2350 - ms -5.0 - - v db dbm g m v p v gso p 1db g 1db drain current - 1800 2100 ma i dsr power-added efficiency -20- % add gain flatness -- 0.6 db ? g thermal resistance channel to case - 4.0 4.5 c/w r th 3rd order intermodulation distortion f = 15.3ghz, ? f = 10mhz 2-tone test pout = 26.0dbm s.c.l. -42 -45 - dbc im 3 test conditions unit limit typ. max. min. electrical characteristics (ambient temperature ta=25 c) case style: ia g.c.p.: gain compression point, s.c.l.: single carrier level 10v x i dsr x r th channel temperature rise -- 80 c ? t ch features ?high output power: p 1db = 37.0dbm (typ.) ?high gain: g 1db = 5.5db (typ.) ?high pae: add = 20% (typ.) ?low im 3 = -45dbc@po = 26.0dbm (typ.) ?broad band: 14.5 ~ 15.3ghz ?impedance matched zin/zout = 50 ? ?hermetically sealed description the FLM1415-6F is a power gaas fet that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. eudyna s stringent quality assurance program assures the highest reliability and consistent performance.
2 FLM1415-6F internally matched power gaas fet power derating curve 50 0 100 150 200 case temperature ( c) 40 30 20 10 total power dissipation (w) -50 -40 -20 -30 im 3 (dbc) output power & im 3 vs. input power 17 19 21 23 25 input power (s.c.l.) (dbm) s.c.l.: single carrier level 27 29 31 33 25 output power (s.c.l.) (dbm) im 3 v ds =10v f 1 = 15.3 ghz f 2 = 15.31 ghz 2-tone test 23 p out output power vs. frequency pin=32dbm 28dbm 30dbm 26dbm 14.5 14.7 14.9 15.1 15.3 frequency (ghz) 32 35 34 33 36 37 38 output power (dbm) v ds =10v p 1db output power vs. input power v ds =10v f = 14.65 ghz 22 24 26 28 30 32 input power (dbm) 34 36 38 32 30 28 30 15 output power (dbm) add p out add (%)
3 FLM1415-6F internally matched power gaas fet s-parameters v ds = 10v, i ds = 1800ma frequency s11 s21 s12 s22 (mhz) mag ang mag ang mag ang mag ang 14300 .487 65.7 1.862 123.5 .080 119.3 .676 -41.2 14400 .454 52.3 1.736 113.6 .087 108.0 .639 -47.6 14500 .422 37.2 1.858 103.3 .095 98.6 .591 -54.5 14600 .382 15.1 2.003 88.3 .106 82.3 .513 -65.1 14700 .355 -2.7 2.099 76.9 .116 71.5 .445 -73.6 14800 .333 -20.5 2.170 64.9 .122 60.2 .370 -82.7 14900 .317 -45.3 2.232 49.0 .129 44.3 .274 -96.6 15000 .309 -64.0 2.249 37.0 .132 33.9 .202 -109.1 15100 .302 -80.9 2.231 24.6 .133 22.5 .128 -124.1 15200 .301 -102.0 2.207 9.9 .137 7.5 .049 -171.9 15300 .308 -116.8 2.172 -1.7 .138 -3.1 .054 91.4 15400 .315 -130.4 2.108 -12.8 .139 -13.1 .118 59.1 15500 .316 -147.5 2.025 -26.9 .131 -27.7 .201 44.8 +j250 +j100 +j50 +j25 +j10 0 -j10 -j25 -j50 -j100 -j250 s 11 s 22 180 +90 0 -90 s 21 s 12 scale for |s 21 | scale for |s 12 | 0.1 0.2 14.7 14.7 14.9 14.9 15.1 15.1 15.3 15.3 15.5 15.5 14.5 14.5 10 25 1 2 3 4 14.3 ghz 14.3 ghz 14.7 14.7 14.9 15.1 15.1 15.3 15.3 15.5 15.5 14.5 14.5 14.3 ghz 14.3 ghz
4 FLM1415-6F internally matched power gaas fet 2-r 1.25 0.15 (0.049) 0.5 (0.020) 8.1 (0.319) 13.0 0.15 (0.512) 16.5 0.15 (0.650) 3.2 max. (0.126) 1.8 0.15 (0.071) 0.1 (0.004) 9.7 0.15 (0.382) 1.5 min. (0.059) 1.5 min. (0.059) 1.15 (0.045) 0.2 max. (0.008) case style "ia" metal-ceramic hermetic package unit: mm(inches) 1. gate 2. source (flange) 3. drain 4. source (flange) 1 2 3 4 eudyna devices inc. products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: caution ?do not put this product into the mouth. ?do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. ?observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. for further information please contact: eudyna devices usa inc. 2355 zanker rd. san jose, ca 95131-1138, u.s.a. tel: (408) 232-9500 fax: (408) 428-9111 www.us.eudyna.com eudyna devices europe ltd. network house norreys drive maidenhead, berkshire sl6 4fj united kingdom tel: +44 (0) 1628 504800 fax: +44 (0) 1628 504888 eudyna devices asia pte ltd. hong kong branch rm. 1101, ocean centre, 5 canton rd. tsim sha tsui, kowloon, hong kong tel: +852-2377-0227 fax: +852-2377-3921 eudyna devices inc. sales division 1, kanai-cho, sakae-ku yokohama, 244-0845, japan tel: +81-45-853-8156 fax: +81-45-853-8170 eudyna devices inc. reserves the right to change products and specifications without notice. the information does not convey any license under rights of eudyna devices inc. or others. ? 2004 eudyna devices usa inc. printed in u.s.a.
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